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APTM100H45FT3G
Full - Bridge MOSFET Power Module
13 14 Q1 Q3
VDSS = 1000V RDSon = 450m typ @ Tj = 25C ID = 18A @ Tc = 25C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies
18 22 19 Q2 23 8 Q4 7
11
10
26
4 3 29 15 30 31 R1 32 16
27
28 27 26 25 29 30
23 22
20 19 18 16 15
Features * Power MOS 7(R) FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * Each leg can be easily paralleled to achieve a phase leg of twice the current capability * RoHS Compliant Max ratings 1000 18 14 72 30 540 357 18 50 2500 Unit V A V m W A mJ
31 32 2 3 4 7 8 10 11 12
14 13
All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ...
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy
T c = 25C T c = 80C
T c = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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1-6
APTM100H45FT3G - Rev 1
July, 2006
APTM100H45FT3G
All ratings @ Tj = 25C unless otherwise specified
Symbol Characteristic IDSS RDS(on) VGS(th) IGSS
Electrical Characteristics
Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current
Test Conditions
VGS = 0V,VDS= 1000V VGS = 0V,VDS= 800V
Tj = 25C Tj = 125C
Min
Typ
VGS = 10V, ID = 9A VGS = VDS, ID = 2.5mA VGS = 30 V, VDS = 0V
450 3
Max 100 500 540 5 100
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energ Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 18A Inductive switching @ 125C VGS = 15V VBus = 667V ID = 18A R G = 5 Inductive switching @ 25C VGS = 15V, VBus = 667V ID = 18A, R G = 5 Inductive switching @ 125C VGS = 15V, VBus = 667V ID = 18A, R G = 5
Min
Typ 4350 715 120 154 26 97 10 12 121 35 639 380 1046 451
Max
Unit pF
nC
ns
J
J
Source - Drain diode ratings and characteristics
Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge
Test Conditions Tc = 25C Tc = 80C
Min
Typ
VGS = 0V, IS = - 18A IS = - 18A VR = 667V diS/dt = 100A/s Tj = 25C Tj = 125C Tj = 25C Tj = 125C 1.78 4.47
Max 18 14 1.3 18 340 640
Unit A V V/ns ns
July, 2006 2-6 APTM100H45FT3G - Rev 1
C
dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 18A di/dt 700A/s VR VDSS Tj 150C
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APTM100H45FT3G
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min 2500 -40 -40 -40 2.5
Typ
Max 0.35 150 125 100 4.7 110
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To heatsink
M4
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min
Typ 50 3952
Max
Unit k K
RT =
R 25
1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25
T: Thermistor temperature
SP3 Package outline (dimensions in mm)
1
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
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APTM100H45FT3G - Rev 1
July, 2006
17
28
APTM100H45FT3G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.4 Thermal Impedance (C/W) 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse
0 0.00001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 60 I D, Drain Current (A) I D, Drain Current (A) 50 40 30 20 10 0 0 5 10 15 20 25 VDS , Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A)
Normalized to VGS=10V @ 9A V GS=10V VGS=20V 5.5V 5V VGS =15&8V 7V 6.5V 6V
Transfert Characteristics 80 70 60 50 40 30 20 10 0 30 0 1 2 3 4 5 6
T J=25C T J=125C T J=-55C TJ=125C
VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
7
8
9 10
VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 20 18 16 14 12 10 8 6 4 2 0 25 50 75 100 125 150
July, 2006 4-6 APTM100H45FT3G - Rev 1
RDS(on) Drain to Source ON Resistance
1.4 1.3 1.2 1.1 1 0.9 0.8 0
10
20
30
40
50
ID, Drain Current (A)
TC, Case Temperature (C)
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APTM100H45FT3G
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 14 12 10 8 6 4 2 0 0 40 80 120 160 200 Gate Charge (nC)
July, 2006
ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
VGS =10V ID=9A
100
100s limited by RDSon 1ms
10
10ms
1
Single pulse TJ=150C TC=25C
0 1 10 100 1000 VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage ID=18A TJ=25C
VDS=200V V DS =500V VDS=800V
10000
Ciss Coss Crss
1000
100
10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
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APTM100H45FT3G - Rev 1
APTM100H45FT3G
Delay Times vs Current 160 140 td(on) and td(off) (ns) 120 100 80 60 40 20 0 5 10 15 20 25 30 35 40 I D, Drain Current (A) Switching Energy vs Current td(on) 10 0 5 10 15 20 25 30 ID, Drain Current (A) 35 40
VDS=667V RG=5 TJ=125C L=100H
Rise and Fall times vs Current 60
V DS =667V RG =5 T J=125C L=100H
t d(off) tr and tf (ns)
50 40 30 20
tf
tr
Switching Energy vs Gate Resistance 2.5 Switching Energy (mJ)
V DS =667V ID=18A T J=125C L=100H
2
Switching Energy (mJ)
1.5 1 0.5 0 5
V DS =667V RG =5 T J=125C L=100H
Eon
Eoff
2 1.5 1
E off
Eon Eoff
0.5 0
10
15
20
25
30
35
40
0
5
10
15
20
25
30
I D, Drain Current (A) Operating Frequency vs Drain Current
VDS=667V D=50% RG=5 T J=125C T C=75C
Gate Resistance (Ohms) Source to Drain Diode Forward Voltage I DR, Reverse Drain Current (A) 1000
300 250 Frequency (kHz) 200
ZCS ZVS
100
TJ=150C
150 100 50 0 6 8 10 12 14 16 ID, Drain Current (A) 18
Hard switching
10
T J=25C
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V)
July, 2006
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTM100H45FT3G - Rev 1

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